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 2SB1474
Transistor
Power Transistor (-80V, -4A)
2SB1474
!Features 1) Darlington connection for a high hFE. 2) Built-in resistor between base and emitter. 3) Built-in damper doide. !External dimensions (Units : mm)
0.75
5.5
1.5
(3) (2) (1)
2.3
0.9
0.9
0.65 2.3
1.0 0.5
0.5
1.5 2.5 9.5
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCES VEBO IC PC Tj Tstg
Limits -80 -80 -7 -4 -6 1 10 150 -55~+150
Unit V V V A(DC) A W W (Tc=25C)
ROHM : CPT3 EIAJ : SC-63
*
C C
*
Single pulse, Pw=100ms
!Packaging specifications and hFE
Type Package hFE Code Basic ordering unit (pieces) 2SB1474 CPT3 1k~10k TL 2500
!Circuit diagram
C
B
R1 R1 3k R2 300
R2 E B : Base C : Collector E : Emitter
!Electrical characteristics (Ta=25C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO ICBO IEBO VCE(sat) hFE fT Cob Min. -80 -80 1000 Typ. -1 5000 12 45 Max. -100 -3 -1.5 10000 Unit V V A mA V MHz pF IC=-50A IC=-1mA VCB=-80V VEB=-5V IC/IB=-2A/-4mA VCE/IC=-3V/-2A VCE=-5V, IE=0.5A, f=10MHz VCB=-10V, IE=0A, f=1MHz Conditions
*1 *1 *2
*1 Measured using pulse current. *2 Transition frequency of the device.
2.3
!Absolute maximum ratings (Ta=25C)
5.1 6.5
C0.5
0.8Min.
(1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source)


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